Low-Energy Electron Interactions with Hydrocarbons on Silicon: Toward Low-Temperature Growth of Silicon Carbide
The interaction of hydrocarbons with silicon surfaces is a topic of wide interest. This is due to the technological importance of silicon carbide (SiC) and other semiconductor materials. In an effort to develop a low-temperature growth strategy for SiC interfaces, we investigate the interaction of unsaturated hydrocarbons (such as acetylene) adsorbed on Si(111) surfaces and the low-energy electron-induced chemistry of these systems.
Detection of hydrogen from the low-energy electron bombardment of acetylene on Si(111)
Acetylene (C2D2) is adsorbed on a Si(111) single crystal substrate. The surface is bombarded with low-energy (5-50 eV) electrons and the production and release of neutral hydrogen is monitored via resonance enhanced multiphoton ionization (REMPI) and time-of-flight mass spectrometry (TOF-MS).
Electron Beam-Enhanced Chemical Vapor Deposition (EBCVD) of SiC
We are currently exploring the use of low energy electrons in conjunction with chemical vapor deposition (CVD) of acetylene, SiCl4 and other precursors to grow thin layers of silicon carbide (SiC) on silicon single crystal substrates at low temperatures. We refer to the process as Electron Beam Enhanced Chemical Vapor Deposition (EBCVD) and the resulting films are analyzed by Auger electron spectroscopy, scanning electron microscopy, and scanning tunneling microscopy.
Members on Project
Kristin Shepperd, Doogie Oh, Lan Sun, Christopher Lane, Thomas Orlando
Collaborators
- Phillip N. First, School of Physics, Georgia Institute of Technology
- W. Jack Lackey, School of Mechanical Engineering, Georgia Institute of Technology
- Andrei Fedorov, School of Mechanical Engineering, Georgia Institute of Technology
Funding
National Science Foundation Nanoscience Interdisciplinary Research Team (NIRT)